-
1
-
-
0034504425
-
Operation of the TRIUMF (20-500 MeV) proton irradiation facility
-
E. W. Blackmore, "Operation of the TRIUMF (20-500 MeV) proton irradiation facility," IEEE Radiation Effects Dose Workshop, pp 1-5, 2000.
-
(2000)
IEEE Radiation Effects Dose Workshop
, pp. 1-5
-
-
Blackmore, E.W.1
-
2
-
-
0033332609
-
Single event upset characterization of the pentium® MMX and pentium® II microprocessors using proton irradiation
-
Dec.
-
D. Hiemstra and A. Baril, "Single event upset characterization of the pentium® MMX and pentium® II microprocessors using proton irradiation", IEEE Trans. on Nucl. Sci., vol. 46, no. 6, pp. 1453-1460, Dec. 1999.
-
(1999)
IEEE Trans. on Nucl. Sci.
, vol.46
, Issue.6
, pp. 1453-1460
-
-
Hiemstra, D.1
Baril, A.2
-
3
-
-
84952825576
-
Stress Synergy in Proton Induced Single Event Effects in SRAM
-
Nov.
-
L. S. Erhardt, T. Cousins, and D. Estan "Stress Synergy in Proton Induced Single Event Effects in SRAM", DREO Internal Report, Nov. 2001.
-
(2001)
DREO Internal Report
-
-
Erhardt, L.S.1
Cousins, T.2
Estan, D.3
-
4
-
-
0036952439
-
Comparison of Charge Yield in MOS Devices for Different Radiation Sources
-
Dec.
-
P. Paillet, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, R. L. Jones., O. Flament and E. Blackmore, "Comparison of Charge Yield in MOS Devices for Different Radiation Sources", IEEE Trans. on Nucl. Sci., vol. 49, no. 6, pp. 2656-2661, Dec. 2002.
-
(2002)
IEEE Trans. on Nucl. Sci.
, vol.49
, Issue.6
, pp. 2656-2661
-
-
Paillet, P.1
Schwank, J.R.2
Shaneyfelt, M.R.3
Ferlet-Cavrois, V.4
Jones, R.L.5
Flament, O.6
Blackmore, E.7
-
5
-
-
85008035292
-
Proton Radiation Effects in XC4036XLA Field Programmable Gate Arrays
-
Apr.
-
N. J. Buchanan and D. M. Gingrich, "Proton Radiation Effects in XC4036XLA Field Programmable Gate Arrays", IEEE Trans. on Nucl. Sci., vol. 50, no. 2, p. 263, Apr. 2003.
-
(2003)
IEEE Trans. on Nucl. Sci.
, vol.50
, Issue.2
, pp. 263
-
-
Buchanan, N.J.1
Gingrich, D.M.2
-
6
-
-
0018480034
-
The TRIUMF Thermal Neutron Facility
-
proceedings of the Particle Accelerator Conference
-
J. Burgerjon, A. S. Arrott, I. M. Thorson, T. L. Templeton, T. A. Hodges and R. E. Blaby, "The TRIUMF Thermal Neutron Facility", proceedings of the Particle Accelerator Conference, IEEE Trans. on Nucl. Sci., NS-26, pp. 3061-3064, 1979.
-
(1979)
IEEE Trans. on Nucl. Sci.
, vol.NS-26
, pp. 3061-3064
-
-
Burgerjon, J.1
Arrott, A.S.2
Thorson, I.M.3
Templeton, T.L.4
Hodges, T.A.5
Blaby, R.E.6
-
7
-
-
0002189915
-
FLUKA: Status and Prospective for Hadronic Applications
-
A. Fasso, A. Ferrari, J. Ranft, and P. R. Sala, FLUKA: Status and Prospective for Hadronic Applications, proceedings of the MonteCarlo 2000 Conference, 2000.
-
(2000)
Proceedings of the MonteCarlo 2000 Conference
-
-
Fasso, A.1
Ferrari, A.2
Ranft, J.3
Sala, P.R.4
-
10
-
-
0003444176
-
International Commission on Radiological Protection
-
74, Pergamon Press
-
"International Commission on Radiological Protection", ICRP Pub. 74, Pergamon Press (1997).
-
(1997)
ICRP Pub.
-
-
-
11
-
-
0036923569
-
Neutron-Induced Soft Errors, Latchup, and Comparison of SER Test Methods for SRAM Technologies
-
Dec.
-
P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Neutron-Induced Soft Errors, Latchup, and Comparison of SER Test Methods for SRAM Technologies," IEDM Tech. Digest, pp. 333-336, Dec. 2002.
-
(2002)
IEDM Tech. Digest
, pp. 333-336
-
-
Dodd, P.E.1
Shaneyfelt, M.R.2
Schwank, J.R.3
Hash, G.L.4
-
12
-
-
0038649284
-
Neutron-Induced Latchup in SRAMs at Ground Level
-
Apr.
-
P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Neutron-Induced Latchup in SRAMs at Ground Level," Proc. Int. Reliability Phys. Symp., pp. 51-55, Apr. 2003.
-
(2003)
Proc. Int. Reliability Phys. Symp.
, pp. 51-55
-
-
Dodd, P.E.1
Shaneyfelt, M.R.2
Schwank, J.R.3
Hash, G.L.4
-
14
-
-
0035127652
-
Neutron-induced boron fission as a major source of soft errors in high density SRAMs
-
R. C. Baumann and E. B. Smith, "Neutron-induced boron fission as a major source of soft errors in high density SRAMs," Microelectronics Reliability, vol. 41, pp. 211-218, 2001.
-
(2001)
Microelectronics Reliability
, vol.41
, pp. 211-218
-
-
Baumann, R.C.1
Smith, E.B.2
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