Radiation-induced soft error rates of advanced CMOS bulk devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 217-225

  Seifert, N ^a   Slankard, P ^a   Kirsch, M ^a   Narasimham, B ^c   Zia, V ^a   Brookreson, C ^a   Vo, A ^a   Mitra, S ^b   Gill, B ^a   Maiz, J ^a  

^a INTEL CORPORATION   (United States)

^b Stanford University   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Charge collection; Logic; MBU; Radiation; Sequential; SER; SEU; Soft error; SRAM

Indexed keywords

CHARGE COLLECTION; ONE-DIMENSIONAL CROSS SECTIONS; SUSCEPTIBILITY;

BIT ERROR RATE; CHARGE DISTRIBUTION; ERROR ANALYSIS; RADIATION EFFECTS; STATIC RANDOM ACCESS STORAGE;

CMOS INTEGRATED CIRCUITS;

EID: 34250777043     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251220     Document Type: Conference Paper

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