Critical charge calculations for a bipolar SRAM array

IBM Journal of Research and Development

Volumn 40, Issue 1, 1996, Pages 119-129

  Freeman, L B ^a,b,c,d,e  

^a IBM MICROELECTRONICS   (United States)

^b Cache Design Department

^c IBM   (United States)

^d LEHIGH UNIVERSITY   (United States)

^e STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CALCULATIONS; CELLULAR ARRAYS; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC RESISTANCE; ERRORS; THERMAL GRADIENTS;

CRITICAL CHARGE; MANUFACTURING PROCESS TOLERANCES; POWER SUPPLY VOLTAGE; SOFT ERROR RATE; SRAM;

RANDOM ACCESS STORAGE;

EID: 0029752087     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.401.0119     Document Type: Article

References (17)

1. J. F. Ziegler, "Terrestrial Cosmic Rays," IBM J. Res. Develop. 40, 19-39 (1996, this issue).
2. R. L. Woodruff and P. J. Rudeck, "Three Dimensional Numerical Simulation of Single Event Upset of an SRAM Cell," IEEE Trans. Nucl. Sci. 40, 1795-1803 (1993).
3. S. Satoh, R. Sudo, H. Tashiro, N. Higaki, S. Yamaguchi, and N. Nakayama, "CMOS-SRAM Soft Error Simulation System," Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits: NUPAD V, Honolulu, June 5-6, 1994, pp. 181-184.
4. J. Schwank, "Basic Mechanisms of Radiation Effects in the Natural Space Environment," presented at the IEEE Nuclear and Space Radiation Conference Short Course, Tucson, AZ, 1994.
5. W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, "Simulation of Cosmic-Ray Induced Soft Errors and Latch-up in Integrated Circuit Computer Memories," IEEE Trans. Nucl. Sci. NS-26, 5087 (1979).
6. E. L. Petersen, P. Shapiro, H. H. Adams, and E. A. Burke, "Calculation of Cosmic Ray Induced Soft Upsets and Scaling in VLSI Devices," IEEE Trans. Nucl. Sci. NS-29, 2055-2063 (1982).
7. W. E. Price, D. K. Nichols, P. R. Measel, and K. L. Wahlin, "Single Event Upset Sensitivity of Low Power Schottky Devices," IEEE Trans. Nucl. Sci. NS-29, 2064-2066 (1982).
8. J. A. Zoutendyk, "Modeling of Single-Event Upset in Bipolar Integrated Circuits," IEEE Trans. Nucl. Sci. NS-30, 4540-4545 (1983).
9. W. A. Kolasinski, R. Koga, and D. L. Chenette, "Heavy-Ion Induced Single Event Upsets in a Bipolar Logic Device," IEEE Trans. Nucl. Sci. NS-30, 4470-4474 (1983).
10. J. A. Zoutendyk, L. S. Smith, G. A. Soli, P. Thieberger, and H. E. Wegner, "Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM," IEEE Trans. Nucl. Sci. NS-32, 4164 (1985).
11. J. A. Zoutendyk, E. C. Secrest, and D. F. Berndt, "Investigation of Single-Event Upset (SEU) in an Advanced Bipolar Process," IEEE Trans. Nucl. Sci. 35, 1573-1577 (1988).
12. R. Belt, D. Berndt, and G. Harvey, "SEU-Hardened Bipolar Flip-Flops," J. Radiation Effects, Res. & Eng. 6, 121 (1988).
13. J. R. Hauser, "SEU Effects in Bipolar RAMs," J. Radiation Effects, Res. & Eng. 6, 44 (1988).
14. G. R. Srinivasan, "Modeling the Cosmic-Ray-Induced Soft-Error Rate in Integrated Circuits: An Overview," IBM J. Res. Develop. 40, 77-89 (1996, this issue).
15. P. C. Murley and G. R. Srinivasan, "Soft-Error Monte Carlo Modeling Program, SEMM," IBM J. Res. Develop. 40, 109-118 (1996, this issue).
16. J. A. Dorler, J. M. Mosley, G. A. Ritter, R. O. Seeger, and J. R. Struk, "A 1024-Byte ECL Random Access Memory Using a Complementary Transistor Switch (CTS) Cell," IBM J. Res. Develop. 25, 126-134 (1981).
17. G. R. Srinivasan, H. K. Tang, and P. C. Murley, "Parameter-Free, Predictive Modeling of Single Event Upsets due to Protons, Neutrons, and Pions in Terrestrial Cosmic Rays," IEEE Trans. Nucl. Sci. 41, 2063-2070 (1994).