Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2420-2423

  Sim, Jang Hoan ^a,c   Choi, Rino ^a   Lee, Byoung Hun ^b   Young, Chadwin ^a   Zeitzoff, Peter ^a   Kwong, Dim Lee ^c   Bersuker, Gennadi ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

HfSiO; Poly Si; TIN; Trapping detrapping

Indexed keywords

ELECTRODES; ELECTRON TRAPS; POLYSILICON; THRESHOLD VOLTAGE; TITANIUM NITRIDE; TRANSCONDUCTANCE;

HFSIO; NEGATIVE GATE VOLTAGES; SENSING CYCLE; TRAPPING/DETRAPPING;

DIELECTRIC MATERIALS;

EID: 21244436373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2420     Document Type: Conference Paper

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