Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7807-7814

  Li, Ming Fu ^a,b   Chen, Gang ^a   Shen, Chen ^a   Wang, Xin Peng ^a   Yu, Hong Yu ^a   Yeo, Yee Chia ^a   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

CMOS; FET; Reliability

Indexed keywords

BIAS-TEMPERATURE INSTABILITY (BTI); CRITICAL LIMITING FACTOR; DIGITAL INVERTER CIRCUITS; INTERFACE TRAPS;

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PASSIVATION; RELIABILITY; SILICA; STRESS ANALYSIS; ULTRATHIN FILMS;

MOSFET DEVICES;

EID: 12844262199     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7807     Document Type: Conference Paper

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