A Novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1073-1079

  Wang, Tahui ^a   Chan, Chien Tai ^a   Tang, Chun Jung ^a   Tsai, Ching Wei ^b   Wang, Howard C H ^b   Chi, Min Hwa ^b   Tang, Denny D ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

HfSiON; High k trap properties; Positive bias temperature instability (PBTI) recovery transient; Single electron emission; Thermally assisted tunneling

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRON EMISSION; ELECTRON TRAPS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; TEMPERATURE MEASUREMENT;

GATE DIELECTRIC; GATE VOLTAGE; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI); THERMALLY ASSISTED TUNNELING; TRAP DENSITY; TRAPPED ELECTRON EMISSION;

MOSFET DEVICES;

EID: 33646024026     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871849     Document Type: Article

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