Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 130-133

  Crupi, F ^a   Pace, C ^a   Cocorullo, G ^a   Groeseneken, G ^b,c   Aoulaiche, M ^b   Houssa, M ^b  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

CMOS reliability; High k dielectrics; Lifetime extrapolation; Positive bias temperature instability

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; EXTRAPOLATION; HAFNIUM COMPOUNDS; PERMITTIVITY; SILICATES; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

CMOS RELIABILITY; HIGH-K DIELECTRICS; LIFETIME EXTRAPOLATION; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI);

MOSFET DEVICES;

EID: 19944418828     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.055     Document Type: Conference Paper

References (6)

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