Noise as a Diagnostic Tool for Quality and Reliability of Electronic Devices

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 2176-2187

  Vandamme, L K J ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; MESFET DEVICES; RELIABILITY; SHOT NOISE; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; THERMAL NOISE;

BURST NOISE; ELECTRICAL VIAS; GENERATION RECOMBINATION NOISE; MODFET DEVICES; NOISE SPECTRA; QUALITY INDICATOR; RELIABILITY DIAGNOSTICS; SERIES RESISTANCE;

ELECTRON DEVICES;

EID: 0028547276     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333839     Document Type: Article

References (80)

1. 6th Int. Conf. on Noise in Physical Systems, Gaithersburg, MD, 1981, P. H. E. Meijer, R. D. Mountain, and R. J. Soulen, Eds. Washington: NBS Special Publication, no. 614, 1981.
2. 7th Int. Conf. on Noise in Physical Systems, Montpellier, 1983, M. Savelji, G. Lecoy, and J.-P. Nougier, Eds. Amsterdam: North-Holland, 1983.
3. 8th Int. Conf. on Noise in Physical Syst., Rome, 1985, A. D’Amico and P. Mazetti, Eds. Amsterdam: North-Holland, 1986.
4. 9th Int. Conf. on Noise in Physical Systems, Montreal, 1987. C. M. van Vliet Ed. Singapore: World Scientific, 1987.
5. 10th Int. Conf on Noise in Physical Syst., Budapest, 1989, A. Ambrozy, Ed. Budapest: Akademiai Kiado, 1990.
6. Int. Conf. on Noise in Phys. Systems, Kyoto, 1991, T. Musha, S. Sato, and M. Yamamoto, Eds. Tokyo: Ohmisha Ltd., 1991.
7. Noise in Physical Systems and 1/f Fluctuations, St. Louis 1993, P. H. Handel and A. L. Chung, Eds., AIP Conf. Proc. 285. New York: AIP Press, 1993.
8. E. A. Amerasekera and D. S. Campbell, Failure Mechanisms in Semiconductor Devices. Chichester, UK: Wiley, 1987.
9. Materials Research Society Symposium Anaheim, CA, 1991, J. R. Lloyd, F. G. Yost, and P. S. Ho, Eds. Pittsburgh: Materials Research Society Proceedings, vol. 225, 1991.
10. Europe. Symp. on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 93), Bordeaux, 1993, ADERA.
11. 3rd Europe. Symp. on Reliabilty of Electron Devices, Failure Physics and Analysis (ESREF 92), Schwabisch Gmund, 1992, VDE-Verlag, Berlin, 1992.
12. B. K. Jones, “Electrical noise as a measure of quality and reliability in electronic devices,” Advances in Electronics and Electron Physics, vol. 87, pp. 201-257, 1993.
13. F. N. Hooge, “1/ f noise sources” T. G. M. Kleinpenning, “Low-frequency noise in modem bipolar transistors: Impact of intrinsic transistor and parasitic series resistances” D. M. Fleetwood, T. L. Meisenheimer and J. H. Scofield, “1/f noise and radiation effects in MOS devices” L. K. J. Vandamme, X. Li, and D. Rigaud, “1/f noise in MOS devices, mobility or number fluctuations?”IEEE Trans. Electron Devices, vol. 41, no. 11.
14. T. V. Blalock and R. L. Shepard, “Survey, applications and prospects of Johnson noise thermometry,” pp. 260-268 in ref. [1].
15. G. Lecoy and R. Alabedra, “Bruit de fond des diodes regulatrices de tension,” Colloques Internationaux du Centre National de la Recherche Scientifique, no. 204, pp. 209-214, 1971.
16. R. Alabedra, C. Maile, D. Ratsira, and G. Lecoy, “Utilisation des mesures de bruit pour la determination du photocourant primaire dans les photodiodes a avalanche n+pπP+au silicium,” Revue Phys. Appl., vol. 15, p. 1201-1208, 1980.
17. Y. J. Yu, G. Bosman, and P. K. Bhattacharya, “Noise properties of InGaAs/InAlAs superlattice avalanche photodiodes,” pp. 212-216 in [4].
18. B. Orsal, A. H. Maatougui, R. Alabedra, M. Savelli, G. Leveque, and J. C. Flachet, “Noise and impact ionization rates for electrons and holes in Hg0.56Cd0.44Te avalanche photodiode for optical fibre transmission systems at 2.5 μm,” pp. 251-258 in ref. (5).
19. E. S. Ferr, L. M. Nelson, F. G. Ascarrunz, and F. L. Walls, “Relationship of AM to PM noise in selected microwave amplifiers, RF oscillators and microwave oscillators,” see pp. 611-614 in [7].
20. U. J. Strasilla and M. J. O. Strutt, “Measurement of white and 1/f noise within burst noise,” Proc. IEEE, 1711-1713, 1974.
21. M. J. Kirton and M. J. Uren, “Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise,” Advances in Physics, 38, pp. 367-368, 1989.
22. T. G. M. Kleinpenning, “On 1/f noise and random telegraph noise in very small electronic devices,” Physica, vol. B164, pp. 331-334, 1990.
23. K. F. Knott, “Low energy electron beam investigation of planar transistors using scanning electron microscopy with particular reference to burst noise,” pp. 97-99, in [1].
24. K. Kandiah, M. O. Deighton and F. B. Whiting, “A physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys., vol. 66, pp. 937-948, 1989.
25. K. Kandiah and F. B. Whiting, “Low frequency noise in junction field effect transitors,” Solid-State Electronics, 21, 1079-1088, 1978.
26. K. M. van Vliet and J. R. Fassett, Fluctuation Phenomena in Solids, R. E. Burgess, Ed. New York: Academic, 1965, chap. 7.
27. L. Loreck, H. Dambkes, K. Heime, K. Ploog, and G. Weimann, “Low frequency noise in AlGaAs-GaAs 2-D electron gas devices and its correlation to deep levels,” IEEE Electron Device Lett., vol. EDL-5, p. 9, 1984. See also pp. 261-264 in [2].
28. J. R. Kirtley, T. N. Teis, P. M. Mooney, and S. L. Wright, “Noise spectroscopy of deep levels (DX) centers in GaAs ALx-Ga1-x-As As heterostructures,” J. Appl. Phys. 63, pp. 1541-1548, 1988. See also pp. 70-73 in [4].
29. S. Kugler, K. Heime, W. Schlapp, and G. Weimann, “Determination of trap parameters in highly doped semiconductors from low-frequency noise spectra,” pp. 201-204 in [5].
30. F. Pascal, M. de Murcia, G. Lecoy, and L. K. J. Vandamme, “1/f and g-r noise in AlGaAs epitaxial layers,” Solid State Electron., vol. 37, pp. 1503-1508, 1994.
31. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, “Exper-imental studies on 1/f noise,” Rep. Prog. Phys., vol. 44, pp. 449-532, 1981.
32. F. N. Hooge and L. K. J. Vandamme, “Lattice scattering causes 1/f noise,” Physics Letters, vol. 66A, pp. 315-316, 1978.
33. L. Ren and M. R. Leys, “1 / f noise at room temperature in n-type GaAs grown by molecular beam epitaxy,” Physica B, vol. 182, pp. 319-323, 1991.
34. V. Palenskis and Z. Shoblitskas, “Origin of 1/f noise,” Solid-State Commun., vol. 43, pp. 761-763, 1982.
35. F. N. Hooge and M. Tacano, “Experimental studies of 1/f noise in n-GaAs,” Physica B190, pp. 145-149, 1993.
36. M. I. Sun, J. G. Cottle, and T. M. Chen, “Determination of Al-based metal film lifetime using excess noise measurements,” pp. 519-522 in ref. [5].
37. T. M. Chen, P. Fang, and J. G. Cottle, “Electromigration and 1/f" noise in Al-based thin films,” pp. 515-518 in ref. [5].
38. M. L. Dreyer, “l/f2noise and electromigration in Al-Cu interconnects,” pp. 59-64 in [9].
39. J. Hall, N. J. Hall, and T. M. Chen, “Resistance drift and I/f2 voltage spectra in the high-Tcsuperconducting transition region,” pp. 111-114 in [7].
40. A. Touboul, F. Verdier, and Y. Herve, “Low noise measurements applied to the determination of electromigration mechanisms in Al(Si, Ti) and NiCr stripes,” pp. 73-77 in [6].
41. W. Yang and Z. Celik-Butler, “A model for electromigration and low-frequency noise in thin metal films,” Solid State Electron., vol 34, pp. 911-916, 1991.
42. Z. Celik-Butler, “Low-frequency noise measurements as a characterization and testing tool in micro electronics,” pp. 200-205 in [7].
43. S. Chicca, C. Ciofi, A. Diligenti, V. DiLizia, A. Nannini, and B. Neri, “Electromigration in Al/Si Films: Low frequency noise spectra and TEM observations,” 347-350 in ref. [10].
44. T. M. Chen, “Excess noise and reliability of Al-based thin films,” pp. 17-22 in [7].
45. L. K. J. Vandamme, “Annealing of implants reduces lattice defects and 1/f noise,” Solid State Phenomena, vols. 1 and 2, pp. 153-158, 1988. see also J. Appl. Phys., vol. 59, pp. 3169-3147, 1986.
46. L. Ren and F. N. Hooge, “Temperature dependence of 1/f noise in epitaxialn-type GaAs,” Physica B, vol. 176, pp. 209-212, 1992.
47. L. Ren, “Intrinsic and extrinsic 1/f noise source in proton-irradiated n-GaAs epitaxial layers,” J. Appl. Phys., vol. 74, pp. 4534-4539, 1993.
48. L. K. J. Vandamme, “Bulk and surface 1/f noise,” IEEE Trans. Electron Devices, vol. 36, pp. 987-992, 1989.
49. L. K. J. Vandamme and R. G. M. Penning de Vries, “Correlation between MOST 1/f noise and CCD transfer inefficiency,” Solid-State Electron., vol. 28, pp. 1049-1056 (1985).
50. V. V. Potenkin, A. V. Stepanov, and G. P. Zhigal’skii, “1/f noise in thin metal films: the role of steady and mobile defects,” AIP Conf. Proc. 285. New York: AIP Press, pp. 61-64 in [7].
51. J. Pelz and J. Clarke, “Dependence of 1/f noise on defects induced in copper films by electron irradiation,” Phys. Rev. Lett., vol. 55, p. 738-741, 1985.
52. D. M. Fleetwood and N. Giordano, “Direct link between 1/ f noise and defects in metal films,” Phys. Rev. B, vol. 31, p. 1157-1160, 1985.
53. L. K. J. Vandamme, “On 1/f noise in ohmic contacts,” Ph.D. dissertation, Eindhoven Univ. Technology, 1976.
54. L. H. F. Ortmans and L. K. J. Vandamme, “Characterization of impulse-fritting procedures of contacts by measuring 1/f noise,” Appl. Phys., vol. 9, p. 147, 1976.
55. L. K. J. Vandamme, “Comments on, ' ‘An exact formula for the effects of resistor geometry on current noise,’” IEEE Trans. Electron Devices, vol. ED-33, pp. 1833-1834, 1986.
56. L. K. J. Vandamme, “Comments on, ' ‘1/f oise in metal contacts and granular resistors,’” IEEE Trans. Components, Hybrids, Manuf Technol., vol. CHMT-10, 290-291, 1987.
57. L. K. J. Vandamme, “1/f noise of point contacts affected by uniform films,” J. Appl. Phys., vol. 45, pp. 4563-4565, 1974.
58. L. K. J. Vandamme and A. Douib, “Specific contact resistance and noise in contacts on thin layer,” Solid-State Electron., vol. 25, pp. 1125-1127, 1982.
59. L. K. J. Vandamme and R. P. Tijburg, “1/f noise measurements for characterizing multispot low-ohmic contacts,” J. Appl. Phys., vol. 47, pp. 2056-2058, 1976.
60. E. P. Vandamme and L. K. J. Vandamme, “1/f noise and its coherence as a diagnostic tool for quality assessment of potentiometers,” IEEE Trans. Comp. Hyb. and Manuf. Techn., Sept. 1994.
61. X. Y. Cheng, M. R. Leys and F. W. Ragay, “Low frequency noise in p+GaAs with non-alloyed contacts,” Electronics Lett., vol. 30, pp. 600-601, 1994.
62. M. Rolland, S. Gaillard, E. Vilemain, D. Rigaud, and M. Valenza, “Low noise ohmic contacts on n and p type GaSb,” Journal de Physique III, vol. 9, pp. 1825-1832, 1993.
63. L. K. J. Vandamme, “On the calculation of 1/ f noise of contacts,” Appl. Phys., vol. 11, pp. 89-96, 1976.
64. L. K. J. Vandamme and A. van Kemenade, “Resistance noise measurement, a better diagnostic tool to detect stress and current-induced degradation,” 419-423 in [11].
65. T. G. M. Kleinpenning, “1/f noise in p-n junction diodes,” J. Vac. Sci. Technol., vol. A3, no. 1, pp. 176-182, 1985.
66. L. K. J. Vandamme, R. Alabedra, and M. Zommiti, “1/f noise as a reliability estimation for solar cells,” Solid-State Electron., vol. 26, pp. 671-674, 1983.
67. T. G. M. Kleinpenning, F. Schurink, and J. H. C. van der Veer, “1/f noise as a sensitive parameter in the life prediction testing of photovoltaic modules,” Solar Cells, vol. 12, pp. 363-370, 1984.
68. L. K. J. Vandamme and B. Orsal, “1/f noise in short n-p+ diffusion-current-dominated (HgCd)Te avalanche photodiodes,” IEEE Trans. Electron Devices, vol. 35, pp. 502-506, 1988.
69. L. K. J. Vandamme and B. Orsal, “1/f noise in Hg0.56Cd0.44Te avalanche photodiodes,” pp. 449-452 in [4].
70. L. K. J. Vandamme and L. J. van Ruyven, “1 / f noise used as a reliability test for diode lasers,” pp. 245-247 in [2].
71. M. Fukuda, T. Hirono, T. Kurusaki, and F. Kano, “Correlation between 1/f noise and semiconductor laser degradation,” pp. 335-339 in ref. [10].
72. A. Konczakowska, “Lifetime dependence of 1 / f noise of bipolar transistors,” pp. 489-492 in [4].
73. B. Grzybowski, A. Konczakowska, and L. Spiraloki, “1 / f noise as the indicator of manufacturing process quality of bipolar transistors, “ pp. 485-488 in [4].
74. A. Konczakowska and H. Gladysz, “Noise as a lifetime estimator for bipolar transistors,” pp. 241-244 in [5].
75. A. Konczakowska, “1/f noise as an indicator of quality of power transistors,” pp. 260-263 in [7].
76. L. K. J. Vandamme, D. Rigaud, J. M. Peransin, R. Alabedra and J. M. Dumas, “Gate current l/f noise in GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 1071-1075, 1988. See also pp. 445-448 in [4].
77. J. M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, “l/f noise in MODFET’s at low drain bias,” IEEE Trans. Electron Devices, vol. 37, pp. 2250-2253, 1990.
78. X. Li and L. K. J. Vandamme, “l/f noise in MOSFET as a diagnostic tool,” Solid-State Electron., vol. 35, pp. 1477-1481, 1992.
79. A. Hoffmann, M. Valenza, R. Rigaud, and L. K. J. Vandamme, “Radiation effects on radiation hardened LDD CMOS transistors,” pp. 362-365 in [7].
80. L. K. J. Vandamme and L. S. H. Dik, “Bias-temperature treatment, surface state density and l/f noise in MOST’s,” pp. 244-247 in [1].