SCOPUS 정보 검색 플랫폼

Volumn , Issue , 2003, Pages 247-250

Investigation of electron and hole mobilities in MOSFETs with TiN/HfO2/SiO2 gate stack

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; MOSFETS;

EID: 33244481339 PISSN: 19308876 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2003.1256860 Document Type: Conference Paper

Times cited : (4)

References (10)

1
- 0034453465
- B.H. Lee, R. Choi, L. Kang, S. Gopalan, R, Nieh, K. Onishi, Y Jeon, W-J Qi, C. Kang, JC Lee, IEDM 2000, Tech. Digest, p. 39
- IEDM 2000, Tech. Digest , pp. 39
- Lee, B.H.¹ Choi, R.² Kang, L.³ Gopalan, S.⁴ Nieh, R.⁵ Onishi, K.⁶ Jeon, Y.⁷ Qi, W.-J.⁸ Kang, C.⁹ Lee, J.C.¹⁰

2
- 0034785113
- S.J. Lee, H.F. Luan, C.H. Lee, T.S. Jeon, W.P. Bai, Y. Senzaki, D. Roberts, D.L. Kwong, VLSI Symp. 2001, Tech. Digest, p. 133
- VLSI Symp. 2001, Tech. Digest , pp. 133
- Lee, S.J.¹ Luan, H.F.² Lee, C.H.³ Jeon, T.S.⁴ Bai, W.P.⁵ Senzaki, Y.⁶ Roberts, D.⁷ Kwong, D.L.⁸

3
- 33646206568
- K. Onishi, C.S. Kang, R. Choi, H.J. Cho, S. Gopalan, R. Nieh, E. Dharmarajan, J.C. Lee, IEDM 2001, Tech. Digest, p.951
- IEDM 2001, Tech. Digest , pp. 951
- Onishi, K.¹ Kang, C.S.² Choi, R.³ Cho, H.J.⁴ Gopalan, S.⁵ Nieh, R.⁶ Dharmarajan, E.⁷ Lee, J.C.⁸

4
- 0002611878
- R. Choi, C.S. Kang, B.H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan, J.C. Lee, VLSI Symp. 2001, Tech. Digest, p. 15.
- VLSI Symp. 2001, Tech. Digest , pp. 15
- Choi, R.¹ Kang, C.S.² Lee, B.H.³ Onishi, K.⁴ Nieh, R.⁵ Gopalan, S.⁶ Dharmarajan, E.⁷ Lee, J.C.⁸

5
- 4544256729
- B. Gnillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel, J.A. Chroboczek, P. Masson, R. Truche, A.M. Papon, F. Martin, J.F. Dalamcourt, S. Maitrejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J.L. Autran, T. Skotnicki, S. Deleonibus, IEDM 2002, Tech. Digest, p. 355.
- IEDM 2002, Tech. Digest , pp. 355
- Gnillaumot, B.¹ Garros, X.² Lime, F.³ Oshima, K.⁴ Tavel, B.⁵ Chroboczek, J.A.⁶ Masson, P.⁷ Truche, R.⁸ Papon, A.M.⁹ Martin, F.¹⁰ Dalamcourt, J.F.¹¹ Maitrejean, S.¹² Rivoire, M.¹³ Leroux, C.¹⁴ Cristoloveanu, S.¹⁵ Ghibaudo, G.¹⁶ Autran, J.L.¹⁷ Skotnicki, T.¹⁸ Deleonibus, S.¹⁹

6
- 0022693437
- M.F. Hamer, IEE Proc, 133, 49 (1986).
- (1986) IEE Proc , vol.133 , pp. 49
- Hamer, M.F.¹

7
- 0022600166
- P.J. McWhorter and P.S. Winokur, Appl. Phys. Lett., 48, 133 (1986).
- (1986) Appl. Phys. Lett , vol.48 , pp. 133
- McWhorter, P.J.¹ Winokur, P.S.²

8
- 0000652792
- T. Matsuoka, S. Taguchi, Q.D.M. Khosru, K. Taiguchi, C. Hamaguchi, J. Appl. Phys. 78 (5) p.3252 (1995)
- (1995) J. Appl. Phys , vol.78 , Issue.5 , pp. 3252
- Matsuoka, T.¹ Taguchi, S.² Khosru, Q.D.M.³ Taiguchi, K.⁴ Hamaguchi, C.⁵

9
- 0004005306
- 2nd edition. Wiley, New York
- S.M. Sze, Physics of semiconductor devices, 2nd edition. Wiley, New York, 1981
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

10
- 0019048875
- S.C. Sun and J.D. Plummer, IEEE Trans. Electron Devices, Vol ED-27, p1497 (1980).
- (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1497
- Sun, S.C.¹ Plummer, J.D.²

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