Fully depleted SOI devices with TiN gate and elevated source-drain structures

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 56-57

  Bagchi, S ^a   Grant, J M ^a   Chen, J ^a   Samavedam, S ^a   Huang, F ^a   Tobin, P ^a   Conner, J ^a   Prabhu, L ^a   Tiner, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); MICROELECTRONICS; MOS DEVICES; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SOURCE-DRAIN STRUCTURES;

MOSFET DEVICES;

EID: 0034472833     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)