Postdeposition-anneal effect on negative bias temperature instability in HfSiON gate stacks

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 1, 2007, Pages 146-151

  Aoulaiche, Marc ^b,c   Houssa, Michel ^b,c   Conard, Thierry ^b   De Gendt, Stefan ^b,d   Groeseneken, Guido ^a,b,c   Maes, Herman E ^a,b,c   Heyns, Marc M ^b,c  

^a IEEE

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

HfSiON; Metal organic chemical vapor deposited (MOCVD); Negative bias temperature instability (NBTI); Nitrogen; pMOSFETs; Postdeposition anneal (PDA); TaN metal gate

Indexed keywords

ANNEALING; DEGRADATION; DEPOSITION; ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDATION; PHOTOELECTRONS;

METAL GATES; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PMOSFETS; POSTDEPOSITION ANNEAL (PDA);

GATE DIELECTRICS;

EID: 34547164871     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.897516     Document Type: Conference Paper

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