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Volumn 280, Issue 1-3, 2001, Pages 143-149

Interface modification of ultrathin SiO2/Si(0 0 1) by nitric oxide treatments: A comparative electron paramagnetic resonance and nuclear reaction analysis study

(5) Cantin, Jean Louis a Von Bardeleben, Hans Jurgen a Gosset, Laurent Georges a Ganem, Jean Jacques a Trimaille, Isabelle a

a SORBONNE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; DIELECTRIC RELAXATION; HELIUM; INTERFACES (MATERIALS); NITRIDING; NITROGEN OXIDES; REDUCTION; SILICA; SILICON; THERMOOXIDATION; ULTRATHIN FILMS;

NUCLEAR REACTION ANALYSIS; RAPID THERMAL OXIDATION;

DIELECTRIC FILMS;

EID: 0034826308 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(00)00367-7 Document Type: Article

Times cited : (3)

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