Model for NBTI in p-MOSFETs with ultra thin nitrided gated oxides

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 133-134

  Houssa, M ^a   Patthasarath, C R ^b   Huard, V ^c   Revil, N ^b   Vincent, E ^b   Autran, J L ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM NITRIDE; DRAIN CURRENT; MICROELECTRONICS; MOSFET DEVICES; THRESHOLD VOLTAGE;

ELECTRICAL STRESS; FIELD DEPENDENCE; GATE OXIDE; GAUSSIANS; MICRO-ELECTRONIC DEVICES; NITRIDED; P-MOSFETS; SI-SIO 2 INTERFACE; ULTRA-THIN;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 34547207272     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194250     Document Type: Conference Paper

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