Improving electrical characteristics of Ta Ta2 O5 Ta capacitors using low-temperature inductively coupled N2 O plasma annealing

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Tsai, Kou Chiang ^a,b   Wu, Wen Fa ^a   Chao, Chuen Guang ^b   Wu, Chi Chang ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; OXYGEN VACANCIES; PLASMA APPLICATIONS; TANTALUM COMPOUNDS;

CURRENT VOLTAGE ANALYSIS; PLASMA TREATMENT;

CAPACITORS;

EID: 34547155742     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2719624     Document Type: Article

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