Inductively coupled plasma deposited silicon oxycarbide interlayers

Electrochemical and Solid-State Letters

Volumn 6, Issue 10, 2003, Pages

  Tsai, Kou Chiang ^a   Shieh, Jia Min ^a   Dai, Bau Tong ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRODEPOSITION; HYDROGEN; INDUCTIVELY COUPLED PLASMA; IONIZATION; LEAKAGE CURRENTS; MOLECULAR STRUCTURE; MULTILAYERS; OXYGEN; PERMITTIVITY; SYNTHESIS (CHEMICAL);

LOW DEFECT SITES; MATERIAL CHARACTERISTICS; POROUS DENSITIES; SILICON OXYCARBIDE; TRIMETHYLSILANE BASED CARBON DOPED OXIDE;

SILICON COMPOUNDS;

EID: 1842843870     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1601371     Document Type: Article

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