Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1757-1763

  Smith, Bradley C ^a   Khandelwal, Amit ^a   Lamb, H Henry ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); MASS SPECTROMETRY; MATHEMATICAL MODELS; OXIDATION; PARTIAL DIFFERENTIAL EQUATIONS; PLASMA DENSITY; REACTION KINETICS; SEMICONDUCTOR GROWTH;

DIFFUSION-REACTION MODEL; PLASMA ASSISTED OXIDATION; PLASMA ELECTRONS;

SEMICONDUCTING SILICON;

EID: 0034350484     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591467     Document Type: Article

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