Influence of N2O plasma treatment on microstructure and thermal stability of WNx barriers for Cu interconnection

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 993-999

  Tsai, Kou Chiang ^a   Wu, Wen Fa ^b   Chen, Jen Chung ^a   Pan, Te Jen ^a   Chao, Chuen Guang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER COMPOUNDS; DIFFUSION; FLOW OF FLUIDS; GRAIN BOUNDARIES; MICROSTRUCTURE; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA THEORY; SEMICONDUCTOR DIODES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION BARRIERS; JUNCTION DIODES; PLASMA TREATMENT; TUNGSTEN NITRIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 3242671696     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (24)

1. C. A. Ross, Mater. Res. Soc. Symp. Proc. 225, 35 (1991).
2. M. Iguchi et al., Technical Digest of the International Electron Devices Meeting (IEEE, Washington, 1999), p. 615.
3. J. Tones, Appl. Surf. Sci. 91, 112 (1995).
4. S. P. Murarka, Microelectron. Eng. 37/38, 29 (1997).
5. H. Li, S. Jin, H. Bender, F. Lankmans, I. Heyvaent, K. Maex, and L. Froyen, J. Vac. Sci. Technol. B 18, 242 (2000).
6. J. S. Becker and R. G. Gordon, Appl. Phys. Lett. 82, 2239 (2003).
7. S. Wong, C. Ryu, H. Lee, and K. Kwon, Mater. Res. Soc. Symp. Proc. 514, 75 (1998).
8. S. Ganguli, L. Chen, T. Levine, B. Zheng, and M. Chang, J. Vac. Sci. Technol. B 18, 237 (2000).
9. M. Hecker et al., Microelectron. Eng. 64, 269 (2002).
10. P. J. Pokela, C. K. Kwok, E. Kowala, S. Raud, and M. A. Nicolet, Appl. Surf. Sci. 53, 364 (1991).
11. Y. T. Kim, C. S. Kwon, D. J. Kim, J. W. Park, and C. W. Lee, J. Vac. Sci. Technol. A 16, 477 (1998).
12. K. L. Ou, W. F. Wu, C. P. Chou, S. Y. Chiou, and C. C. Wu, J. Vac. Sci. Technol. B 20, 2154 (2002).
13. W. F. Wu, K. L. Ou, C. P. Chou, and C. C. Wu, J. Electrochem. Soc. 150, G83 (2003).
14. J. A. Thornton and D. W. Hoffman, Thin Solid Films 171, 5 (1989).
15. A. G. Dirks, R. A. M. Wolters, and A. E. M. De Veirman, Thin Solid Films 208, 181 (1992).
16. H. Windischmann, J. Vac. Sci. Technol. A 9, 2459 (1991).
17. B. S. Suh, H. K. Cho, Y. J. Lee, W. J. Lee, and C. O. Park, J. Appl. Phys. 89, 4128 (2001).
18. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Eden Prairie, MN, 1995).
19. H. L. Zhang, D. Z. Wang, and N. K. Huang, Appl. Surf. Sci. 150, 34 (1999).
20. T. Nakajima, K. Watanabe, and N. Watanabe, J. Electrochem. Soc. 134, 3175 (1987).
21. K. M. Chang, T. H. Yeh, and I. C. Deng, J. Appl. Phys. 81, 3670 (1997).
22. S. J. Wang, H. Y. Tsai, S. C. Sun, and M. H. Shiao, J. Electrochem. Soc. 148, 500 (2001).
23. S. J. Wang, H. Y. Tsai, S. C. Sun, and M. H. Shiao, J. Electrochem. Soc. 148, 563 (2001).
24. M. H. Tsai, S. C. Sun, C. E. Tsai, S. H. Chuang, and H. T. Chiu, J. Appl. Phys. 79, 6932 (1996).