Superiority of N2O plasma annealing over O2 plasma annealing for amorphous tantalum pentoxide (Ta2O5) films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 4 B, 1998, Pages

  Lau, Wai Shing ^a   Perera, Merinnage Tamara Chandima ^a   Babu, Premila ^a   Ow, Aik Keong ^a   Han, Taejoon ^a   Sandler, Nathan P ^a   Tung, Chih Hang ^a   Sheng, Tan Tsu ^a   Chu, Paul K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; BINDING ENERGY; CHEMICAL BONDS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; NITROGEN OXIDES; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; TANTALUM COMPOUNDS; THERMAL EFFECTS;

PLASMA ANNEALING; TANTALUM PENTOXIDE; ZERO BIAS THERMALLY STIMULATED CURRENT (ZBTSC);

SEMICONDUCTING FILMS;

EID: 0032047589     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l435     Document Type: Article

References (17)