Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 5977-5981

  Wei Hao, W U ^a   Chen, Mao Chieh ^a   Tsui, Bing Yue ^a   Hou, Yong Tian ^b   Yao, Liang Gi ^b   Jin, Yin ^b   Tao, Hun Jan ^b   Chen, Shih Chang ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Base oxide; Charge trapping; Hafnium silicate; High k gate dielectric; Si composition

Indexed keywords

DEGRADATION; HAFNIUM COMPOUNDS; THIN FILMS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

BASE OXIDE; CHARGE TRAPPING; HAFNIUM SILICATE; HIGH-K GATE DIELECTRIC; SI COMPOSITION;

SILICON COMPOUNDS;

EID: 31544472601     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5977     Document Type: Article

References (14)

1. Y. C. Yeo, T. J. King and C. Hu: IEEE Trans. Electron Devices 50 (2003) 1027.
2. A. Morioka, H. Watanabe, M. Miyamura, T. Tatsumi, M. Saitoh, T. Ogura, T. Iwamoto, T. Ikarashi, Y. Saito, Y. Okada, H. Watanabe, Y. Mochizuki and T. Mogami: Symp. VLSI Technology Dig., 2003, p. 165.
3. T. Iwamoto, T. Ogura, M. Terai, H. Watanabe, H. Watanabe, N. Ikarashi, M. Miyamura, T. Tatsumi, M. Saitoh, A. Morioka, K. Watanabe, Y. Saito, Y. Yabe, T. Ikarashi, K. Masuzaki, Y. Mochizuki and T. Mogami: IEDM Tech. Dig., 2003. p. 639.
4. A. S. Oates: IEDM Tech. Dig., 2003, p. 923.
5. R. Degraeve, T. Kauerauf, A. Kerber, E. Cartier, B. Govoreanu, Ph. Roussel, L. Pantisano, P. Blomme, B. Kaczer and G. Groeseneken: Proc. IRPS, 2003, p. 23.
6. W. J. Zhu, T. P. Ma, S. Zafar and T. Tamagawa: IEEE Electron Device Lett. 23 (2002) 597.
7. W. Y. Loh, B. J. Cho, M. S. Joo, M. F. Li, S. H. Chan, S. Mathew and D. L. Kwong: IEDM Tech. Dig., 2003, p. 927.
8. K. Onishi, R. Choi, C. S. Kang, H. J. Cho, Y. H. Kim, R. E. Nieh, J. Han, S. A. Krishnan, M. Akbar and J. C. Lee: IEEE Trans. Electron Devices 50 (2003) 1517.
9. A. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, M. J. Bevan, R. Khamankar, S. Aur, P. E. Nicollian, J. McPherson and L. Colombo: Proc. IRPS, 2003, p. 208.
10. A. Kerber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H. E. Mase and U. Schwalke: Proc. IRPS, 2003, p. 41.
11. L. Pantisano, E. Cartier, A. Kerber, R. Degraeve, M. Lorenzini, M. Rosmeulen, G. Groeseneken and H. E. Maes: Symp. VLSI Technology Dig., 2003, p. 163.
12. W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim and Y. Di: IEEE Electron Device Lett. 23 (2002) 97.
13. S. Zafar, A. Callegari, E. Gusev and M. Fischetti: J. Appl. Phys. 93 (2003) 9298.
14. I. Lundstrom and C. Svensson: J. Appl. Phys. 43 (1972) 5045.