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Volumn 101, Issue 11, 2007, Pages

The influence of a capping layer on optical properties of self-assembled InGaN quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; STARK EFFECT;

EID: 34250681871     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737971     Document Type: Article
Times cited : (13)

References (25)
  • 4
    • 0035585058 scopus 로고    scopus 로고
    • 0370-1972 10.1002/1521-3951(200103)224:1<1::AID-PSSB1>3.0.CO;2-Z
    • Y. Arakawa, T. Someya, and K. Tachibana, Phys. Status Solidi B 0370-1972 10.1002/1521-3951(200103)224:1<1::AID-PSSB1>3.0.CO;2-Z 224, 1 (2001).
    • (2001) Phys. Status Solidi B , vol.224 , pp. 1
    • Arakawa, Y.1    Someya, T.2    Tachibana, K.3
  • 19
    • 20844444570 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.1935044
    • J. W. Robinson, Appl. Phys. Lett. 0003-6951 10.1063/1.1935044 86, 213103 (2005).
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 213103
    • Robinson, J.W.1
  • 24
    • 0042341675 scopus 로고    scopus 로고
    • 0021-8979 10.1063/1.1576490
    • J. J. Shi and Z. Z. Gan, J. Appl. Phys. 0021-8979 10.1063/1.1576490 94, 407 (2003).
    • (2003) J. Appl. Phys. , vol.94 , pp. 407
    • Shi, J.J.1    Gan, Z.Z.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.