Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Robinson, James W ^a   Rice, James H ^a   Lee, Kwan H ^a   Na, Jong H ^a   Taylor, Robert A ^a   Hasko, David G ^b   Oliver, Rachel A ^b   Kappers, Menno J ^b   Humphreys, Colin J ^b   Briggs, G Andrew D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

EXCITON ENERGY; MICROPHOTOLUMINESCENCE SPECTROSCOPY; STARK EFFECT; SURFACE CHARGE DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844444570     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935044     Document Type: Article

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