V-shaped pits formed at the GaN/AlN interface

Journal of Crystal Growth

Volumn 289, Issue 1, 2006, Pages 63-67

  Bai, J ^a   Wang, T ^a,b   Parbrook, P J ^a   Ross, I M ^a   Cullis, A G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b TIANJIN UNIVERSITY   (China)

Author keywords

A1. Dislocation; A1. TEM; A3. AlN buffer; B2. III V nitride

Indexed keywords

ALUMINUM NITRIDE; ENERGY DISPERSIVE SPECTROSCOPY; MICROSTRUCTURE; SAPPHIRE; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ALN BUFFER; DISLOCATION; III-V NITRIDE; NITRIDE-BASED TERNARY ALLOYS;

GALLIUM NITRIDE;

EID: 33244478536     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.146     Document Type: Article

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