A review of new characterization methodologies of gate dielectric breakdown and negative bias temperature instability

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2006, Pages 25-32

  Alam, M A ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250679829     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2006.250990     Document Type: Conference Paper

References (43)

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