Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

Microelectronics Reliability

Volumn 45, Issue 3-4, 2005, Pages 419-426

  Suehle, J S ^a   Zhu, B ^b   Chen, Y ^c   Bernstein, J B ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION MEASUREMENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ENERGY DISSIPATION; EPITAXIAL GROWTH; LEAKAGE CURRENTS; OXIDES; ULTRATHIN FILMS;

CONDUCTING FILAMENT; DIELECTRIC BREAKDOWN; GATE OXIDES; QUANTUM POINT CONTACT (QPC);

GATES (TRANSISTOR);

EID: 15744387123     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.10.018     Document Type: Article

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