Physical analysis of hard and soft breakdown failures in ultrathin gate oxides

Microelectronics Reliability

Volumn 42, Issue 4-5, 2002, Pages 565-571

  Radhakrishnan, M K ^a   Pey, K L ^b   Tung, C H ^c   Lin, W H ^d  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEGRADATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; FAILURE ANALYSIS; RELIABILITY; STRESSES; SUBSTRATES; TITANIUM COMPOUNDS; ULTRATHIN FILMS;

SOFT BREAKDOWN FAILURES; ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036539453     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00058-6     Document Type: Article

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