Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Miguel Sanchez J ^a,c   Guzman A ^a   Jahn, U ^b   Trampert, A ^b   Ulloa, J M ^a   Munoz E ^a   Hierro, A ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STRUCTURAL PROPERTIES;

ION DENSITY; OPTICAL EMISSION; STRUCTURAL DISORDER;

NITROGEN;

EID: 34249950246     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2733740     Document Type: Article

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