In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 171-175

  Liu, H F ^a   Karirinne, S ^a   Peng, C S ^a   Jouhti, T ^a   Konttinen, J ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CRYSTAL GROWTH; DESORPTION; DIFFUSION; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON SCATTERING; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242286492     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.006     Document Type: Article

References (8)

1. Kondow M., Uomi K., Niwa A., Kitataui T., Watahiki S., Yazawa Y. Jpn. J. Appl Part 1. 35:1996;1273.
2. Pessa M., Peng C.S., Pavelescu E.-M., Jouhti T., Li W., Karirinne S., Liu H.F., Okhotnikov O. IEE Proc: Optoelectro. 150:2003;12.
3. Pavelescu E.-M., Peng C.S., Jouhti T., Konttinen J., Li W., Pessa M., Dumitrescu M., Spanulescu S. Appl. Phys. Lett. 80:2002;3054.
4. Pan Z., Li L.H., Zhang W., Lin Y.W., Wu R.H. Appl. Phys. Lett. 77:2000;1280.
5. Chan M.C.Y., Surya C., Wai P.K.A. J. Appl. Phys. 90:2001;197.
6. Peng C.S., Pavelescu E.-M., Jouhti T., Konttinen J., Fodchuk I.M., Kyslovsky Y., Pessa M. Appl. Phys. Lett. 80:2002;4720.
7. Dumont H., Auvray L., Montell Y., Bondoux C., Largeau L., Patriarche G. Appl. Phys. Lett. 80:2002;2460.
8. Xin H.P., Kavanagh K.L., Zhu Z.Q., Tu C.W. Appl. Phys. Lett. 74:1999;2337.