InGaAsN on GaAs (1 1 1)B for telecommunication laser application

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 234-238

  Miguel Sanchez J ^a   Guzman A ^a   Ulloa, J M ^a   Hierro, A ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ANNEALING; FIBER OPTICS; LIGHT EMITTING DIODES; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; OPTICAL LINKS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

BLUESHIFTS; LASER DEVICES; OPTICAL EMISSION; TELECOMMUNICATION LASERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18444404053     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.068     Document Type: Conference Paper

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