Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 305-308

  Miguel Sanchez J ^a   Guzman A ^a   Ulloa, J M ^a   Hierro, A ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY; QUATERNARY MATERIAL;

QUANTUM WELL LASERS;

EID: 10644273625     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20040910     Document Type: Article

References (14)

1. Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S., and Yazawa, Y.: 'GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys. 1, 1996, 35, p. 1273
2. Kondow, M., Kitani, Y., Nakahara, K., and Tanaka, T.: 'A 1.3 μm GaInNAs laser diode with a lifetime of over 1000 hours', Jpn. J. Appl. Phys. 1999, 38, p. L1355
3. Gollub, D., Fischer, M., Kamp, M., and Forchel, A.: '1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes', Appl. Phys. Lett., 2002, 81, p. 4330
4. Miguel-Sánchez, J., Guzmán, A., Ulloa, J.M., Hierro, A., and Muñoz, E.: 'Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates', Appl. Phys. Lett., 2004, 84, p. 2524
5. Xin, H.P., Kavanagh, K.L., and Tu, C.W.: 'Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells', J. Cryst. Growth, 2000, 208, p. 145
6. Li, W., Pessa, M., Ahlgren, T., and Decker, J.: 'Origin of improved luminescence efficiency after annealing of Ga(In)Nas materials grown by molecular-beam epitaxy', Appl. Phys. Lett., 2001, 79, p. 1094
7. Spruytte, S.G., Larson, M.C., Wampler, W., Coldern, C.W., Petersen, H.E., and Harris, J.S.: 'Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy', J. Cryst. Growth, 2001, 227-228, p. 506
8. Pan, Z., Li, L.H., Zhang, W., Lin, Y.W., Wu, R.H., and Ge, W.: 'Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy', Appl. Phys. Lett., 2000, 77, p. 1280
9. Pavelescu, E-M., Jouhti, T., Dumitrescu, M., Klar, P.J., Karirinne, S., Fedorenko, Y., and Pessa, M.: 'Growth-temperature-dependent (self-) annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells', Appl. Phys. Lett., 2003, 83, p. 1497
10. Grill, A.: 'Cold plasma in materials fabrication: from fundamentals to applications' (Wiley-IEEE Press, 1994)
11. Hierro, A., Ulloa, J.-M., Chauveau, J.-M., Trampert, A., Pinault, M.-A., Tournié, E., Guzmán, A., Sánchez-Rojas, J.L., and Calleja, E.: 'Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy', J. Appl. Phys., 2003, 94, p. 2319
12. 1-x, grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence', J. Appl. Phys., 2002, 91, p. 4900
13. Xin, H.P., Kavanagh, K.L., Kondow, M., and Tu, C.W.: 'Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells', J. Cryst. Growth, 1999, 201-202, p. 419
14. Miguel-Sánchez, J., Guzmán, A., and Muñoz, E.: 'The role of nitrogen ions on the optical and morphological properties of InGaAsN quantum wells for 1.3-1.5 μm applications'. Appl. Phy. Lett., 2004, 85, p. 1940