Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 μm laser diodes

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 419-423

  Carrere H ^a   Arnoult, A ^a   Ricard, A ^b   Marie, X ^c   Amand, Th ^c   Bedel Pereira, E ^a  

^a LAAS CNRS   (France)

^b Ctr Phys Plasmas Applic Toulouse   (France)

^c CNRS   (France)

Author keywords

A1: Characterization; A1: Impurities; A3: Molecular beam epitaxy; B1: Nitrides; B2: Semiconducting III V materials

Indexed keywords

CRYSTAL IMPURITIES; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS;

PHOTOCURRENT SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 0037347087     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00382-9     Document Type: Conference Paper

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