Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1047-1052

  Ulloa, J M ^a,d   Hierro, A ^a   Miguel Snchez J ^a   Guzmn A ^a   Chauveau, J M ^b   Trampert, A ^b   Tournie E ^c   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIV MONTPELLIER   (France)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; MORPHOLOGY; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER LOCALIZATION; CONDUCTION BAND; OPTOELECTRONIC PROPERTIES;

LIGHT EMITTING DIODES;

EID: 33749080961     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/011     Document Type: Article

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