Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy

Micron

Volumn 37, Issue 5, 2006, Pages 465-472

  Kong, X ^a   Trampert, A ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

(Ga, In)(N, As) epilayers; Composition fluctuation; Electron energy loss spectroscopy

Indexed keywords

COMPOSITION; CONCENTRATION (PROCESS); ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HETEROJUNCTIONS; NITROGEN; SUBSTRATES;

(GA, IN)(N, AS) EPILAYERS; COMPOSITION FLUCTUATION; ELECTRON ENERGY-LOSS SPECTROSCOPY; SEMICONDUCTOR EPILAYERS;

NITRIDES;

EID: 33744947351     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2005.11.008     Document Type: Article

References (38)

1. Albrecht M., Grillo V., Remmele T., Strunk H.P., Egorov A.Yu., Dumitras Gh., Riechert H., Kaschner A., Heitz R., and Hoffmann A. Appl. Phys. Lett. 81 (2002) 2719
2. Chan H.M., and Williams D.B. Philos. Mag. B 52 (1985) 1019
3. Chapman J.N., Chapman J.N., Paterson J.H., and Titchmarsh J.M. Inst. Phys. Conf. Ser. 78 (1985) 177
4. Chauveau J.-M., Trampert A., Pinault M.-A., Tournié E., and Ploog K.H. Appl. Phys. Lett. 82 (2003) 3451
5. Chauveau J.-M., Trampert A., Pinault M.-A., Tournié E., Du K., and Ploog K.H. J. Cryst. Growth 251 (2003) 383
6. Egerton R.F. Electron Energy Loss Spectroscopy in the Electron Microscope. second ed. (1996), Plenum, New York
7. Friedman D.J., Geisz J.F., Kurtz S.R., and Olson J.M. J. Cryst. Growth 195 (1998) 409
8. Gass M.H., Papworth A.J., Joyce T.B., Bullough T.J., and Chalker P.R. Appl. Phys. Lett. 84 (2004) 1453
9. Gass M.H., Papworth A.J., Bullough T.J., and Chalker P.R. Ultramicroscopy 101 (2004) 257
10. Grillo V., Albrecht M., Remmele T., Strunk H.P., Egorov A.Yu., and Riechert H. J. Appl. Phys. 90 (2001) 3792
11. Gutiérrez-Sosa A., Bangert U., Harvey A., Fall C.J., Jones R., Briddon P.R., and Heggie M.I. Phys. Rev. B 66 (2002) 035302
12. Harris Jr. J.S. Semicond. Sci. Technol. 17 (2002) 880
13. Harrison W.A. Electronic Structure and the Properties of Solids (1989), Dover, New York pp. 175-176
14. Ho I., and Stringfellow B. J. Cryst. Growth 178 (1997) 1
15. Keast V.J., Scott A.J., Kappers M.J., Foxon C.T., and Humphreys C.J. Phys. Rev. B 66 (2002) 125319
16. Kim K., and Zunger A. Phys. Rev. Lett. 86 (2001) 2609
17. Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., and Yazawa Y. Jpn. J. Appl. Phys. 35 (1996) 1273
18. Kondow M., Kitatani T., Nakatsuka S., Larson M.C., Nakahara K., Yazawa Y., Okai M., and Uomi K. IEEE J. Selected Top. Quantum Electron 3 (1997) 719
19. Leifer K., et al. Inst. Phys. Conf. Ser. 164 (1999) 27
20. Walther T., et al. Phys. Rev. Lett. 86 (2001) 2381
21. Albrecht M., et al. Inst. Phys. Conf. Ser. 169 (2001) 267
22. Sharma N., et al. Inst. Phys. Conf. Ser. 169 (2001) 263
23. Walther T. Proc. EMC2004 1 (2004) 251
24. Litvinov D., Gerthsen D., Rosenauer A., Hetterich M., Grau A., Gilet Ph., and Grenouillet L. Appl. Phys. Lett. 85 (2004) 3743
25. Neugebauer J., and Van de Walle C. Phys. Rev. B 51 (1995) 10568
26. Sanchez A.M., Gass M., Papworth A.J., and Goodhew P.J. Phys. Rev. B 70 (2004) 035325
27. Sanchez A.M., Beanland R., Gass M.H., Papworth A.J., Goodhew P.J., and Hopkinson M. Phys. Rev. B 72 (2005) 075339
28. Skierbiszewski C., Perlin P., Wisniewki P., Knap K., Suski T., Walukiewicz W., Shan W., Yu K.M., Ager J.W., Haller E.E., Geisz J.F., and Olson J.M. Appl. Phys. Lett. 76 (2000) 2409
29. Teukolsky W.H., Vetterling S.A., Flannery W.T., and Flannery B.P. A Multiple-least-squares Procedure was used in the Fit, which was Performed with Programs Descried in Ch.15 of Numerical Recipes in Fortran (1992), Cambridge University Press, Cambridge
30. Thomas P.J., and Midgley P.A. Ultramicroscopy 88 (2001) 179
31. Tournié E., Pinault M.-A., Laügt M., Chauveau J.-M., Trampert A., and Ploog K.H. Appl. Phys. Lett. 82 (2003) 1845
32. Trampert A., Chauveau J.-M., Ploog K.H., Tournié E., and Guzmán A. J. Vac. Sci. Technol., B 22 (2004) 2195
33. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815
34. Vurgaftman, I., Meyer, J.R., 2003. 94, 3675 (and references therein).
35. Xin H.P., Kavanagh K.L., Zhu Z.Q., and Tu C.W. J. Vac. Sci. Technol., B 17 (1999) 1649
36. Xin H.P., Kavanagh K.L., Zhu Z.Q., and Tu C.W. J. Cryst. Growth 201/202 (1999) 419
37. The studied samples are part of the European project 'GaInNAs-based semiconductor heterostructures for 1.5 μm opto-electronics' (project IST-2000-26478-GINA1.5).
38. The nonlinear least squares fitting is based on the Levenberg-Marquardt (LM) algorithm, performed in the software OriginPro 7.0 (OriginLab Corporation, www.originlab.com).