Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 1, 2006, Pages 133-140

  Chen, Jinghao ^a   Yoo, Won Jong ^a   Chan, Daniel S H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ETCHING; HAFNIUM COMPOUNDS; NITROGEN; OXYGEN; SUBSTRATES;

ETCH RATE; PLASMA TREATMENT; THERMAL NITRIDATION;

PLASMA APPLICATIONS;

EID: 29344468706     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2141619     Document Type: Article

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