Notched-Gate pMOSFET with ALD TiN/High-κ gate stack formed by selective wet etching

Electrochemical and Solid-State Letters

Volumn 7, Issue 10, 2004, Pages

  Wu, D ^a   Lu, J ^b   Hellstrom P E ^a   Ostling M ^a   Zhang, S L ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ETCHING; METALLIZING; PLASMAS; TITANIUM NITRIDE;

DOPANT ACTIVATION; GATE STACKS; OVERLAP DISTANCE; SELECTIVE WET ETCHING;

MOSFET DEVICES;

EID: 8344243776     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1795612     Document Type: Article

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