Self-aligned nickel, cobalt/tantalum nitride stacked-gate pmosfets fabricated with a low temperature process after metal electrode deposition

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2456-2460

  Pan, James ^a   Woo, Christy ^a   Ngo, Minh Van ^a   Yang, Chih Yuh ^a   Besser, Paul ^a   King, Paul ^a   Bernard, Joffre ^a   Adem, Ercan ^a   Tracy, Bryan ^a   Pellerin, John ^a   Xiang, Qi ^a   Lin, Ming Ren ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

Co; Damascene; Metal gate; Ni; PMOSFETs; Replacement; TaN

Indexed keywords

ANNEALING; COBALT; DIELECTRIC DEVICES; NICKEL; POLYSILICON; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY;

GATE DIELECTRICS; METAL ELECTRODE DEPOSITION;

MOSFET DEVICES;

EID: 0347338035     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819434     Document Type: Article

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