Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Journal of Physics D: Applied Physics

Volumn 40, Issue 11, 2007, Pages 3461-3467

  Lucas, F O ^a   Mitra, A ^a   McNally, P J ^a   Daniels, S ^a   Bradley, A L ^b   Taylor, D M ^c   Proskuryakov, Y Y ^d   Durose, K ^d   Cameron, D C ^e  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b TRINITY COLLEGE DUBLIN   (Ireland)

^c BANGOR UNIVERSITY   (United Kingdom)

^d DURHAM UNIVERSITY   (United Kingdom)

^e LAPPEENRANTA UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COPPER COMPOUNDS; ENERGY GAP; IONIC CONDUCTIVITY; LATTICE MISMATCH; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS;

DISLOCATION DENSITIES; HYBRID PLATFORMS; REVERSIBLE ELECTRODES;

THIN FILMS;

EID: 34249333102     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/11/030     Document Type: Article

References (60)

1. Khan M A, Chen Q, Wang J W, Shur M S, Dermott B T and Higgins J A 1996 IEEE Electron. Devices Lett. 17 325
2. Tan S T, Chen B J, Sun X W, Hu X, Zhang X H and Chua S J 2005 J. Cryst. Growth 281 571
3. Xing H, McCarthy L, Keller S, DenBaars S P and Mishra U K 2000 Proc. IEEE 27th Int. Symp. on Compound Semiconductors (Monterey, CA) p 365 High current gain GaN bipolar junction transistors with regrown emitters
4. Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T and Mukai T 1995 Japan. J. Appl. Phys. 34 L1332
5. Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T, Mutsushita T, Kiyoku H and Sugimoto Y 1996 Japan. J. Appl. Phys. 35 L74
6. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
7. Jeong Kyeong J et al 2005 J. Cryst. Growth 276 407
8. Nakamura S et al 1998 Appl. Phys. Lett. 72 211
9. Davis R F, Gehrke T, Linthicum K J, Zheleva T S, Preble E A, Rajagopal P, Zorman C A and Mehregany M 2001 J. Cryst. Growth 225 134
10. Torvik J T, Qiu C, Leksono M and Pankove J I 1998 Appl. Phys. Lett. 72 945
11. Koleske D D, Henry R L, Twigg M E, Culbertson J C, Binari S C, Wickenden A E and Fatemi M 2002 Appl. Phys. Lett. 80 4372
12. Uen W, Li Z, Lan S and Liao S 2005 J. Cryst. Growth 280 335
13. Look D C, Hemsky J W and Sizelove J R 1999 Phys. Rev. Lett. 82 2552
14. Jung S, Kononenko V and Choi W 2006 Solid State Commun. 137 474
15. Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2005 Prog. Mater. Sci. 50 293
16. Minegishi K, Koiwai Y, Kikuchi Y, Yano K, Kasuga M and Shimizu A 1997 Japan. J. Appl. Phys. 36 L1453
17. Li X, Yan Y, Gessert T A, Dehart C, Perkins C L, Young D and Coutts T J 2003 Electrochem. Solid State Lett. 6 C56
18. Guo, Tabata H and Kawai T 2001 J. Cryst. Growth 223 135
19. Ashrafi A B M, Suemune I, Kumano H and Tanaka S 2002 Japan. J. Appl Phys. 41 L1281
20. Barnes T M, Olson K and Wolden C A 2005 Appl. Phys. Lett. 86 112112
21. Perkins C L, Lee S-H, Li X, Asher S E and Coutts T J 2005 J. Appl. Phys. 97 034907
22. Grahn H T 1999 Introduction to Semiconductor Physics (Singapore: World Scientific)
23. Ueta M, Kanzaki H, Kobayashi K, Toyosawa Y and Hanamura E 1986 Excitonic Progresses in Solid (Berlin: Springer)
24. Reimann K and Rubenacke St 1994 J. Appl. Phys. 76 4897
25. Sterzer F, Blattner D and Miniter S 1964 J. Opt. Soc. Am. 54 62
26. Matsui T and Wagner J B Jr 1978 Solid Electrolytes ed P Hagemuller and W Van Gool (New York: Academic) p 237 and references therein
27. Bardeen J 1978 J. Less Comm. Met. 62 447
28. Tennakone K, Punchihewa S and Tantrigoda R 1989 Sol. Energy Mater. 18 217
29. Reboul G 1911 C. R. Hebd. Seances Acad. Sci. 153 1215
30. Dutta P K, Rao R R, Swartz S L and Holt C T 2002 Sensors Actuators B 84 189
31. Meijer E J, Detchevery C, Baesjou P J, van Veenedaal E, de Leeuw D M and Klapwijk T M 2003 J. Appl. Phys. 93 4831
32. Nakayama M, Soumura A, Hamasaki K, Takeuchi H and Nishimura H 1997 Phys. Rev. B 55 10099
33. Yanase A and Segawa Y 1998 Appl. Surf. Sci. 130-132 566
34. Certier M, Wecker C and Nikitine S 1969 J. Phys. Chem. Solids 30 2135
35. Goto T, Takahashi T and Ueta M 1968 J. Phys. Soc. Japan 24 314
36. Nagasawa N, Nakata N, Doi Y and Ueta M 1975 J. Phys. Soc. Japan 39 987
37. Souma H, Goto T, Ohta T and Ueta M 1970 J. Phys. Soc. Japan 29 697
38. Garro N, Cantarero A, Cardona M, Ruf T, Göbel A, Lin C, Reimann K, Rtibenacke K and Steube M 1996 Solid State Commun. 98 27
39. Göbel A, Ruf T, Cardona M, Lin C T, Wrzesinski J, Steube M, Reimann K, Merle J-C and Joucla M 1998 Phys. Rev. B 57 15183
40. Pagés O, Erguig H, Lazreg A, Katty A, Lusson A and Gorochov O 2000 Mater. Sci. Eng. B 69-70 431
41. Wagner C 1956 Z. Elektrochem. 60 4
42. Joshi A V and Wagner J B Jr 1975 J. Electrochem Soc. 122 1071
43. Wagner J B and Wagner C 1957 J. Chem. Phys. 26 1597
44. Hebb M 1952 J. Chem. Phys. 20 185
45. Lauque P, Bendahan M, Seguin J-L, Pasquineli M and Knauth P 1999 J. Eur. Ceram. Soc. 19 823
46. Rivera J, Murray L A and Moss P A 1967 J. Cryst. Growth 1 171
47. Ida T, Saeki H, Hamada H and Kimura K 1996 Surf. Rev. Lett. 3 41
48. McDonald J R 1987 Impedance Spectroscopy (New York: Wiley)
49. Abrantes J C C, Labrincha J A and Frade J R 2000 Mater. Res. Bull. 35 727
50. Denk I, Claus J and Maiser J 1997 J. Electrochem. Soc. 144 3526
51. Brune A and Wagner J B Jr 1995 Mater. Res. Bull. 30 573
52. Bendahan M, Seguin J-L, Lauque P, Aguir K and Knauth P 2003 Sensors Actuators B 95 170
53. Bendahan M, Jacolin C, Lauque P, Seguin J-L and Knauth P 2001 J. Phys. Chem. B 105 8327
54. Schmidt R, Basu A and Brinkman A W 2004 J. Eur. Ceram. Soc. 24 1233
55. Tubandt C and Eggert S 1920 Z. f. Anorg. Chem. 110 196
56. Harrison L G and Prasad M 1974 J. Chem. Soc. Faraday Trans. I 70 471
57. Bard A and Faulkner L 1980 Electrochemical Methods-Fundamentals and Applications (New York: Wiley)
58. O'Reilly L, Natarajan G, Lucas F O, McNally P J, Cameron D C, Reader A, Martinez-Rosas M and Bradley A L 2005 J. Mater. Sci.: Electron. Mater. 16 415
59. Schwab C and Goltzené A 1982 Prog. Cryst. Growth Charact. 5 233
60. Lucas F O et al 2006 J. Cryst. Growth 287 112