Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on silicon

Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 7, 2005, Pages 415-419

  O'Reilly, L ^a   Natarajan, G ^a   McNally, P J ^a   Cameron, D ^a   Lucas, O F ^a   Martinez Rosas, M ^b   Bradley, L ^b   Reader, A ^a   Daniels, S ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHARACTERIZATION; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; ENERGY GAP; LATTICE CONSTANTS; OPTICAL PROPERTIES; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL ALIGNMENT; LATTICE MISMATCH; NOVEL MATERIAL SYSTEM; OPTOELECTRONIC MATERIALS; WIDE-BANDGAP;

COPPER COMPOUNDS;

EID: 24944563753     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10854-005-2307-3     Document Type: Article

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