High current gain GaN bipolar junction transistors with regrown emitters

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 365-369

  Xing, H ^a   McCarthy, L ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC DEVICES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUMERICAL ANALYSIS; TEMPERATURE;

BASE COLLECTOR JUNCTION DIODE; BIPOLAR JUNCTION TRANSISTORS; CARRIER LIFETIME; CURRENT GAIN; REGROWN EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034425001     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)