Electron transport in high quality undoped ZnO film grown by plasma-assisted molecular beam epitaxy

Solid State Communications

Volumn 137, Issue 9, 2006, Pages 474-477

  Jung, Yeon Sik ^a   Kononenko, Oleg V ^a,b   Choi, Won Kook ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

A. Zinc oxide; B. Molecular beam epitaxy; C. Dislocation; E. Hall measurement

Indexed keywords

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY;

DIFFRACTION PEAK; HALL MEASUREMENT;

ZINC OXIDE;

EID: 32644490364     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.12.038     Document Type: Article

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