Influence of SiO2 and Si3N4 passivation on AlGaN/GaN/Si HEMT performance

Electronics Letters

Volumn 39, Issue 15, 2003, Pages 1155-1157

  Javorka, P ^a   Bernat J ^a   Fox, A ^a   Marso, M ^a   Luth H ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SILICON;

MOLE FRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0042069789     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030748     Document Type: Article

References (7)

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2. TAN, W.S., HOUSTON, P.A., PARBROOK, P.J., HILL, G., and AIREY, R.J.: 'Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors', J. Phys. D: Appl. Phys., 2002, 35, pp. 595-598
3. LU, W., KUMAR, V., SCHWTNDT, R., PINER. E., and ADESIDA, I.: 'A comparative study of surface passivation on AlGaN/GaN HEMTs', Solid-State Electron., 2002, 46, pp. 1441-1444
4. HASHIZUME, T., OOTOMO, S., OYAMA, S., KONISHI, M., and HASEGAWA, H.: 'Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures', J. Vac. Sci. Technol., 2001, B19, pp. 1675-1681
5. HARRISON, I., CLAYTON, W., and JEFFS, W.: 'High temperature RF characterisation of SiN passivated and unpassivated AlGaN/GaN HFETs', Phys. Status Solidi (a), 2001, 188, pp. 275-278
6. DIKME, Y., GERSTENBRANDT, G., ALAM, A., KALISCH, H., SZYMAKOWSKI, A., FIEGER. M., JANSEN, R.H., and HEUKEN, M.: 'Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)', J. Cryst. Growth, 2003, 248, pp. 575-582
7. max of 27/22 GHz for 0.5/0.7 μm gate length', Electron. Lett., 2002, 38, pp. 288-289