Enhancement of both direct-current and microwave characteristics of AlGaN/GaN high-electron-mobility transistors by furnace annealing

Applied Physics Letters

Volumn 88, Issue 2, 2006, Pages 1-3

  Arulkumaran, S ^a   Ng, G I ^a   Tan, C L ^a   Liu, Z H ^b   Bu, J ^b   Radhakrishnan, K ^b   Aggerstam, T ^c   Sjodin M ^c   Lourdudoss, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRON TUBES; GALLIUM NITRIDE; MICROWAVES; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

DIRECT-CURRENT (DC); FURNACE ANNEALING; LOW REVERSE GATE-LEAKAGE-CURRENT; MAXIMUM EXTRINSIC TRANSCONDUCTANCE; NIAU SCHOTTKY CONTACT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 30744461347     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162092     Document Type: Article

References (12)

1. P. Parikh, Y.-F. Wu, P. Chavarkar, M. Moore, U. K. Mishra, S. Sheppard, R. P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, and J. Palmour, International Symposium on Compound Semiconductors (ISCS) (2003), p. 165.
2. M. Kanamura, T. Kikkawa, and K. Joshin, Tech. Dig. - Int. Electron Devices Meet. 2003, 766.
3. M. Higashiwaki and T. Matsui, Jpn. J. Appl. Phys., Part 1 44, 474 (2005).
4. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo, Appl. Phys. Lett. 80, 2186 (2002).
5. M. Akita, S. Kishimoto, and T. Mizutani, IEEE Electron Device Lett. 22, 376 (2001).
6. S. Arulkumaran, T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo, IEEE Trans. Electron Devices 48, 573 (2001).
7. T. Nanjo, N. Muira, T. Oishi, M. Suita, Y. Abe, T. Ozeki, S. Nakatsuka, A. Inoue, T. Ishikawa, Y. Matsuda, H. Ishikawa, and T. Egawa, Jpn. J. Appl. Phys., Part 1 43, 1925 (2004).
8. J. Lee, D. Liu, H. Kim, and W. Lu, Solid-State Electron. 48, 1855 (2004).
9. W. B. Lanford, T. Tanaka, Y. Otoki, and I. Adesida, Electron. Lett. 41, 449 (2005).
10. T. Ohki, M. Kanamura, T. Takahashi, T. Kikkawa, K. Joshin, and N. Hara, Phys. Status Solidi C 2, 2529 (2005).
11. S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 1 39, 351 (2000).
12. M. T. Hirch, K. J. Duxstad, and E. E. Haller, Electron. Lett. 33, 95 (1997).