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Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5745-5747

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

(4) Arulkumaran, S a Hibino, T a Egawa, T a Ishikawa, H a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON BEAMS; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PASSIVATION; SILICA;

DISPERSION EFFECTS; DRAIN CURRENTS; POWER DENSITIES; TRAPPING-EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 12844260202 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1830677 Document Type: Article

Times cited : (23)

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