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Electrochemical and Solid-State Letters

Volumn 10, Issue 7, 2007, Pages

Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering

(3) Yan, Jiong a Kuo, Yue a,b Lu, Jiang a,b

a TEXAS A AND M UNIVERSITY (United States)

b ELECTROCHEMICAL SOCIETY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING DENSITY; LEAKAGE CURRENT DENSITY; SUBNANOMETER EQUIVALENT OXIDE THICKNESS;

ANNEALING; DOPING (ADDITIVES); HAFNIUM COMPOUNDS; REACTIVE SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

DIELECTRIC FILMS;

EID: 34248525636 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2730720 Document Type: Article

Times cited : (63)

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