Sub 2 NM thick zirconium doped hafnium oxide high-k gate dielectrics

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 447-454

  Kuo, Y ^a   Lu, J ^a   Chatterjee, S ^a   Yan, J ^a   Kim, H C ^a   Yuan, T ^a   Luo, W ^a   Peterson, J ^b   Gardner, M ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; PERMITTIVITY; SPUTTERING;

DOPANTS; FLAT BAND VOLTAGE; INTERFACE STATE DENSITY; SPUTTERING POWERS;

DIELECTRIC MATERIALS;

EID: 33748757806     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209294     Document Type: Conference Paper

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