Energy band profile of hafnium silicates estimated by X-ray photoelectron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 8199-8202

  Ito, Toshihide ^a   Kato, Hiromitsu ^a,b   Nango, Tomohiro ^a   Ohki, Yoshimichi ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Band gap energy; Band offset; Energy band profile; Gate Insulating material; Hafnium silicate; High k dielectric material; Plasma enhanced chemical vapor deposition; X ray photoelectron spectroscopy

Indexed keywords

BAND STRUCTURE; DIELECTRIC MATERIALS; ELLIPSOMETRY; ENERGY DISSIPATION; HEAT CONDUCTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAP ENERGY; BAND OFFSET; ENERGY BAND PROFILES; GATE INSULATING MATERIALS; HAFNIUM SILICATES; HIGH-K DIELECTRIC MATERIALS;

HAFNIUM COMPOUNDS;

EID: 13644275687     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.8199     Document Type: Article

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