Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1076-1082

  Hatzopoulos, Argyrios T ^a   Arpatzanis, Nikolaos ^a   Tassis, Dimitrios H ^a   Dimitriadis, Charalabos A ^a   Oudwan, Maher ^b   Templier, François ^b   Kamarinos, George ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b CEA LETI   (France)

^c MINATEC   (France)

Author keywords

Bottom gated thin film transistors (TFTs); Leakage current; Nanocrystalline silicon (nc Si); Noise

Indexed keywords

DRAIN CURRENT; ELECTRIC FIELDS; GATES (TRANSISTOR); GRAIN BOUNDARIES; LEAKAGE CURRENTS; NANOCRYSTALLINE SILICON;

BAND-TO-BAND TUNNELING; BOTTOM-GATED THIN-FILM TRANSISTORS; DRAIN LEAKAGE CURRENT; GRAIN BOUNDARY TRAP DENSITY;

THIN FILM TRANSISTORS;

EID: 34247869858     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.893607     Document Type: Article

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