Variation of the exponent of flicker noise in MOSFETs

Solid-State Electronics

Volumn 42, Issue 5, 1998, Pages 803-808

  Wolters, D R ^a   Zegers Van Duijnhoven, A T A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC PROPERTIES; RANDOM PROCESSES; SPURIOUS SIGNAL NOISE;

FLICKER NOISE;

MOSFET DEVICES;

EID: 0032066399     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00090-2     Document Type: Article

References (31)

1. McWorther, A. L., Semiconductor Surface Physics, ed. R. H. Kinston. University of Pennsylvania Press, Philadelphia.
2. Hooge, F., 1/f Noise sources, IEEE Trans. El. Dev., 1994, 41, 1926.
3. α spectrum, Phys. Rev., 1992, 46, 1844.
4. Dutta, P. and Horn, P. M., Low-frequency fluctuations in solids: 1/f noise, Rev. Mod. Phys., 1981, 53, 497.
5. γ noise in Si Mosfets, Solid State Electronics, 1988, 31, 959.
6. + back surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs, Solid State Electronics, 1996, 39, 1577.
7. Wong, H. and Cheng, Y. C., Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors, J. Appl. Phys., 1990, 67, 863.
8. γ noise on gate bias in N-MOSFETs, Solid State Electronics, 1987, 30, 419.
9. Jayaraman, R. and Sodini, C. G., A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon, IEEE Transactions on Electron Devices, 1989, 36, 1773.
10. Weissmann, M. B., 1/f noise and other slow, nonexponential kinetics in condensed matter, Rev. Mod. Phys., 1988, 60, 537.
11. Borello, S. and Celik-Butler, Z., A 1/f noise model based on fluctuating defect states, Solid State Electronics, 1993, 36, 407.
12. Fleetwood, D. M., Winokur, P. S., Reber, R. A.Jr., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R. and Riewe, L. C., Effects of oxide traps interface traps and border traps on MOS devices, J. Appl. Phys., 1993, 73, 5058.
13. Fuks, B. I., Fluctuation slow surface traps, Sov. Phys. JETP, 1992, 75, 294.
14. Kirton, M. J. and Uren, M. J., Noise in solid-state microstructures: A new perspective on individual defects, interface states and low frequency (1/f) noise, Advances in Physics, 1989, 38, 367.
15. Ploor, M. D., Schrimpf, R. D., Galloway, K. F. and Johnson, G. H., Evidence for border traps in MOS transistors through 1/f noise, Appl. Phys. Lett., 1995, 67, 691.
16. Simoen, E. and Claeys, C., Evidence for an alternative, hole trapping related random telegraph signal mechanism in n-channel silicon on insulator MOS transistors, J. Appl. Phys., 1993, 62, 867.
17. Vandamme, L. K. J., Noise as a tool for quality and reliability of electronic devices, IEEE Trans, on El. Dev., 1994, 41, 2176.
18. Wolters, D. R., Zegers-van Duijnhoven, A. T. A. and Augur, R., Universal model for 1/f noise in MOSFETs and interconnects. IEDM94, 1994, 177.
19. Wolters, D. R. and Zegers-van Duijnhoven, A. T. A., Model for 1/f noise in n and p MOSFETs, Microelectr. Engin., 1995, 28, 167.
20. Wolters, D. R. and Zegers-van Duijnhoven, A. T. A., Power model for 1/f noise. Paper presented on the ICNF 1997 in Leuven.
21. Bloom, I. and Nemirovsky, Y., 1/f Noise reduction of MOS transistors by cycling from inversion to accumulation, Appl. Phys. Lett., 1991, 58, 1664.
22. Hung, K. K., Ko, P. K., Hu, C. and Cheng, Y. C., A unified model for the flicker noise in MOS field-effect transistors, IEEE Trans. on El. Dev., 1989, 37, 654.
23. Kandiah, K., Deighton, M. O. and Whiting, F. B., A physical model for random telegraph signal currents in semiconductor devices, J. Appl. Phys., 1989, 66, 937.
24. Mueller, H. H. and Schulz, M., Conductance modulation of sub-μm metal oxide semiconductor field effect transistors by single electron trapping. J. Appl. Phys., 1996, submitted.
25. Morrison, S. R., 1/f noise from levels in a linear or planar array III trapped carrier fluctuations at dislocations, J. Appl. Phys., 1992, 72, 4104.
26. Ng, S. and Surya, C., A model for low frequency excess noise in SiJFETs at low bias, Solid State Electronics, 1992, 35, 1803.
27. Jones, B. K. and Taylor, G. P., Spectroscopy of surface states using the excess noise in a buried channel MOS transistor, Solid State Electronics, 1992, 35, 1285.
28. Roux dit Buisson, O., Ghibaudo, G. and Brini, J., Model for drain current rts amplitude in small area MOS transistors, Solid State Electronics, 1992, 35, 1273.
29. Simoen, E. and Claeys, C., Random telegraph signals in silicon on insulator MOS transistors, J. Appl. Phys., 1994, 75, 3647.
30. Wang, Y., Spectrum of anomalous random telegraph noise, J. Appl. Phys., 1993, 74, 7609.
31. Zaklikewiecz, A. M., Electrical 1/f noise related to carrier transport, Solid State Electronics, 1993, 36, 1477.