Development of nanocrystalline silicon thin film transistors with low-leakage and high stability for AMOLED displays

Proceedings of International Meeting on Information Display

Volumn 2006, Issue , 2006, Pages 1705-1708

  Templier, François ^a   Oudwan, Maher ^a   Venin, Claude ^a   Villette, Jérôme ^b   Elyaakoubi, Mustapha ^b   Dimitriadis, C A ^c  

^a CEA LETI   (France)

^b Unaxis Displays Division France SAS   (France)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COSTS; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

AM-OLED DISPLAYS; BI-LAYER STRUCTURES; NANOCRYSTALLIM SILICON;

THIN FILM TRANSISTORS;

EID: 33846175367     PISSN: 17387558     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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