Low temperature poly-si tfts using solid phase crystallization of very thin films and an electron cyclotron resonance chemical vapor deposition gate insulator

Japanese Journal of Applied Physics

Volumn 30, Issue 12, 1991, Pages 3724-3728

  Little, Thomas W ^a   Takahara, Ken Ichi ^a   Koike, Hideki ^a   Nakazawa, Takashi ^a   Yudasaka, Ichio ^a   Ohshima, Hiroyuki ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Amorphous; Chemical vapor deposition; Crystallinity; ECR; Polycrystalline; Silicon; SiO2; Solid phase crystallization; TFT

Indexed keywords

EID: 0000403217     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.3724     Document Type: Article

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