Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 4095-4101

  Angelis, C T ^a   Dimitriadis, C A ^b   Samaras, I ^b   Brini, J ^c   Kamarinos, G ^c   Gueorguiev, V K ^d   Ivanov, Tz E ^d  

^a UNIVERSITY OF IOANNINA   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c ENSERG   (France)

^d INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001504828     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365720     Document Type: Article

References (17)

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